高分解能ラザフォード後方散乱分析(RBS)による銀負イオン注入熱酸化薄膜における銀の熱拡散分布の測定と拡散障壁による単層銀ナノ粒子の形成

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Thermal diffusion of implanted Ag atoms in 25-nm-SiO2/Si and nanoparticle formation after annealing at various temperatures were investigated by a high-resolution RBS and cross-sectional TEM. Ag atoms were implanted into the thermal grown thin oxide layer on silicon substrate by negative-ion implantation at 10 keV with 5×1015 ions/cm2. The samples were then thermally annealed at 500, 700 and 800°C for 1 h. In the HRBS measurement with 400 keV He+ beam, Ag atoms in the as-implanted sample were found to have almost the same depth profile as a predicted one by TRIM-DYN calculation, although some Ag atoms diffused to the surface due to local heating during implantation. After annealing at 500°C, a main fraction of Ag atoms appeared at a depth of 12 nm as same as that of the as-implanted sample, and two small precipitations of Ag atoms appeared at depths of 7 and 22 nm. After annealing at 700°, the only one fraction peak of Ag atoms appeared at a depth of 20 nm with a relatively narrow FWHM. At this temperature, the XTEM observation revealed the Ag precipitation at 700°C was contributed from the mono-layered Ag nanoparticles. The both of small and remarkable precipitations of Ag atoms observed at a depth around 22 nm just near the SiO2/Si interface after annealing at the temperature less than 700°C, suggested the existence of a diffusion barrier against Ag atoms in the thermally grown SiO2 on Si. This is considered to be due to compressive stress in the transition layer in SiO2 just near the crystalline Si surface. However, after annealing at 800°C, the Ag atoms diffused to the SiO2/Si interface at 25 nm.
2006-06-20

高分解能ラザフォード後方散乱分析(RBS)による銀負イオン注入熱酸化薄膜における銀の熱拡散分布の測定と拡散障壁による単層銀ナノ粒子の形成

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