Xia Jianxin | Department Of Electronics And Information Systems Osaka University
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概要
関連著者
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Aoki T
Research Institute Of Electronics Shizuoka University
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Aoki Toru
Research Institute Of Electronics Shizuoka University
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Kamakura Y
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University
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SAITO Tomoya
Department of Tropical Medicine and Parasitology, School of Medicine, Keio University
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Aoki T
Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University
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XIA Jianxin
Department of Electronics and Information Systems, Osaka University
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AOKI Takenori
Department of Electronics and Information Systems, Osaka University
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Xia Jianxin
Department Of Electronics And Information Systems Osaka University
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Xia Jianxin
Department Of Dermatology Graduate School Of Medical Sciences Kyushu University
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Aoki T
Department Of Electronics And Information Systems Osaka University
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Saito T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Aoki T
Jamstec
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Saito Tomoya
Department Of Communication Engieering Okayama Prefectural University
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Saito T
School Of Engineering Nagoya University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Kamakura Yoshinari
Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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KIM Ryangsu
Department of Electronics and Information Systems, Osaka University
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Kim R
Osaka Univ. Osaka Jpn
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Kim Ryangsu
Department Of Electronics And Information Systems Osaka University
著作論文
- Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
- Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
- Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate