Investigation of Degradation in Homoepitaxially Grown ZnCdSe/ZmSe Light Emitting Diode

概要

論文の詳細を見る
From the transmission electron microscope (TEM) observation of ZnSe homoepitaxial films, it is clarified that the major pre-existing defects in the film are Shockley extended dislocations. Correlation between the etch pits and the Shockley extended dislocations are also confirmed. The degradation mode of a ZnCdSe/ZnSe homoepitaxial light emitting diode (LED) is discussed on the basis of the microscopic observation. Many dark spot defects(DSDs) are observed in the emission pattern just after turn-on, and they enlarge and become pronounced keeping their round shape. The growth velocity of the DSD is less than 0.056 μm/min for the current density of 408 A / cm^2. The DSD density is almost the same as the etch pit density (EPD) of the as-grown LED wafer.
社団法人応用物理学会の論文
1997-02-15