Low Temperature Growth of SiO_2 Thin Film by Double-Excitation Photo-CVD
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概要
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A new technique for the low-temperature growth of SiO_2 films has been developed by double-excitation photo-CVD. SiO_2 films can be grown at 30〜240℃ from a mixture of Si_2H_6 and O_2 by photo-CVD using a D_2 lamp as a VUV light source, or by double-excitation using an additional Xe lamp or a low-pressure Hg lamp as a UV light source. The growth rate is 90 Å/min in a photo-CVD at 30℃, while deposition does not occur in thermal CVD at 30℃. Concentrations of Si-OH and Si-H bonds can be considerably reduced by the use of photo-excitation. Particularly, double-excitation reduces the oxide-charge density to a large extent and also brings the dielectric constants close to those of thermally-grown SiO_2. The minimum charge density is 5×10^<10> cm^<-2> in a film deposited at 240℃. The interface state density of a Si MOS diode is also reduced by double-excitation using a Hg lamp in an O_2-excess atmosphere and annealing at 280℃. Its minimum density is 8 × 10^<10> cm^<-2>eV^<-1>.
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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INOUE Kohji
Department of Electrical Engineering, Faculty of Engineering Schience, Osaka University
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MICHIMORI Masanori
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Michimori Masanori
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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