An Analysis of Nonvolatile Polarized Memory of Semiconductor-Ferroelectric Heterostructure Junction
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概要
- 論文の詳細を見る
A mechanism of the polarized switching with nonvolatile memory effect in the semiconductorferroelectric thin film junction has been investigated. In the ON state, the large space charge near the semiconductor-ferroelectric interface induced by ferroelectric polarization makes electrons tunnel through the junction. In the OFF state the current flow decreases due to the cancelled space charge. The tunnelling current through the junction with the change of the applied voltage is calculated and compared with the experimental results.
- 社団法人応用物理学会の論文
- 1979-06-05
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
-
Yokoyama Kiyoyuki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University : Present Addre
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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