Recent Progress in Solar Photovoltaic Energy Conversion
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概要
- 論文の詳細を見る
- 2002-01-10
著者
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Hamakawa Yoshihiro
Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
関連論文
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Superjunction by Wafer Direct Bonding
- Field-Excited Electron Emission frorn (1-y)Pb(Mg_Nb_)O_3-yPbTiO_3 Ceramic
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Development of Full-Color Display Combined with Ultraviolet-Electroluminescence/Photoluminescence Multilayered Thin Films
- Electroluminescence and Avalanche Multiplication at Electric Field Strength Exceeding 1 MV/cm in Hydrogenated Amorphous SiC Alloy
- Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films
- Spectroscopic Study on Sputtering of PLZT Thin Film
- Integrated Pyroelectric Infrared Sensor Using PbTiO_3 Thin Film : C-3: SENSORS
- Composition Dependence of Band Gaps of CuGa_In_xS_2
- Enhancement of Field-Excited Electron Emission from Lead-Zirconate-Titanate Ceramic Using Ultrathin Metal Electrode
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
- PbTiO_3 Thin Films Deposited by Laser Ablation : Thin Films
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- Excitation Mechanism of Electroluminescent ZnS Thin Films Doped with Rare-Earth Ions
- Voltage Dependence of Brightness in Rare-Earth Doped Electroluminescent ZnS Thin Film Devices
- The Electron Injection Mechanism of the Electroluminescent ZnS : Tb^ Films
- Voltage Dependence of Light Emission of the Electroluminescent Ta-Ta_2O_5-ZnS:Tb^-Au Thin Films
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:H
- Electrical Conduction in Germanium Grain Boundary Plane
- Out-Diffusion of Chromium and 0.839 eV Luminescence Center in GaAs
- Bias Effect in Rf Sputtering of PbTiO_3 Thin Film : T: Thin Film
- Franz-Keldysh Effect in Silicon P-N Junction
- Carrier Mobility and Dislocation Scattering in the Boundary Layer of Germanium Bicrystals
- Paint-on-diffusant SnO_2/n^+-p Si Heteroface Solar Cell : I-4: SILICON SOLAR CELLS AND SYSTEMS
- Thin Film DC EL Cell of Au/ZnSe:Mn/n-GaAs Hetero-Structure with the Threshold Voltage of 20 V
- PbTiO_3 Thin Film Ultrasonic Micro-Sensor Fabricated on Si Wafer : Ultrasonic Transduction
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Spectroscopic Laser Scanning Analysis of Photo-Induced Current on a-Si Solar Cells
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- An Improvement of the Performance in the UV-EL/PL Full-Color Display by Rapid Thermal Annealing
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Interface Stress at ZnSe/GaAs:Cr Heterostructure
- Effect of Crystal Anisotropy on Differential Energy Spectra in Modulation Spectroscopy
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- In-Depth Profile Measurements of Cr-Related Luminescence Lines in GaAs
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- An Analysis of Nonvolatile Polarized Memory of Semiconductor-Ferroelectric Heterostructure Junction
- Low Threshold DC Electroluminescence in ZnSe : Mn Films Deposited on n-GaAs Single Crystal
- Pulse-Excited Characteristics of Au/ZnSe : Mn/n-GaAs Low Threshold Thin Film DC EL Cell
- Electrooptical Signal at the Anisotropic Saddle Point
- Some Relationships between Modulated Energy Parameter Spectra in One-, Two- and Three-Dimensional Crystals
- Growth of SiO_2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Growth of Oriented Si Film on Quartz from Si_3H_8 by thermal and Photo-CVD Using a D_2 Lamp : Surfaces, Interfaces and Films
- SiO_2 Thin Film Prepared from Si_3H_8 and O_2 by Photo-CVD Using Double Excitation
- Preparation of SiO_2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect
- Low Temperature Growth of SiO_2 Thin Film by Double-Excitation Photo-CVD
- Photo-Induced Chemical Vapor Deposition of SiO_2 Film Using Direct Excitation Process by Deuterium Lamp
- Interface Stress at OMVPE-Grown ZnS_xSe_/GaAs:Cr Heterostructure : Surfaces, Interfaces and Films
- Recent Progress in Solar Photovoltaic Energy Conversion
- Infrared Characterization of Interface State Reduction by F_2 Treatment in SiO_2/Si Structure using Photo-CVD SiO_2 Film
- Carrier Transport in Polycrystalline Silicon Thin Film Solar Cells Grown on a Highly Textured Structure
- Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Analysis of Si–H, Si–O–H and Si–O–O–H Defects in SiO 2 Thin Film by Molecular Orbital Method
- Characterization of Charged Traps near Si–SiO2 Interface in Photo-Induced Chemical Vapor Deposited SiO2 Film
- Highly Oriented Polycrystalline Si Film on Quartz Grown from Si3H8 by Thermal and Photo-CVD