Growth of Oriented Si Film on Quartz from Si_3H_8 by thermal and Photo-CVD Using a D_2 Lamp : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
Polycrystalline Si films have been grown on fused quartz plates at 500-650℃ from Si_3H_8 by thermal CVD and photo-CVD using a D_2 lamp. Thethermal and photo-CVD films prepared above 575℃ are highly &ly;100>-oriented but the films at 545 and 560℃ are <110>-oriented. This tendency is more remarkable in the photo-CVD than in the thermal CVD. These orientations change little in depth, but the orientation horizontal to the film plane is random.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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INOUE Kohji
Department of Electrical Engineering, Faculty of Engineering Schience, Osaka University
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FUJIKI Noriaki
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Fujiki Noriaki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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