Microstructures and Electrical Properties of (Pb, La)TiO_3 Thin Films Grown on the Pt Electrodes with a Percolating Network Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-05-15
著者
-
Nam Hyo
Lg Electronics Research Center
-
Kim Sung-tae
Lg Electronics Research Center
-
Cho S
Lg Corprate Inst. Technol. Seoul Kor
-
Lee Jong
Telecommunication Basic Research Laboratory Electronics And Telecommunications Research Institute
-
OKUYAMA Masanori
Faculty of Engineering Science, Osaka University
-
Okuyama Masanori
Faculty Of Engineering Science Osaka University
-
Lee Don-Hee
LG Electronics Research Center
-
Lee Jeon
LG Electronics Research Center
-
Cho Sung
LG Electronics Research Center
-
Lee Jue
LG Electronics Research Center
-
Choi Ju
LG Electronics Research Center
-
Kim Kwang-Young
LG Electronics Research Center
-
Lee J
Hynix Semiconductor Inc. Chungchongbuk‐do Kor
関連論文
- Low-Temperature Growth of SiO_2 Thin Film by Photo-Induced Chemical Vapor Deposition Using Synchrotron Radiation
- Observation of Deep Impurity Levels in In_GA_As_P_
- Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
- Strained SrTiO_3/ BaTiO_3 Superlattices Formed by Laser Ablation Technique and Their High Dielectric Properties
- Origin of (111) Twin Lamellae in BaTiO_3 Thin Films on Platinum Substrates
- Ninety Degree Domains in RF-Sputtered BaTiO_3 Thin Films on Platinum Substrates
- Chemical Vapor Deposition of PbTiO_3 Thin Film : T: THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by Chemical Vapor Deposition
- Preparation of PbTiO_3 Ferroelectric Thin Film by Laser Annealing : THIN FILM
- Preparation of PbTiO_3 Ferroelectric Thin Film by RF Sputtering
- Ferroelectric Properties of RF Sputtered PLZT Thin Film
- Electric and Pyroelectric Behaviors of PbTiO_3 Thin Films Formed by an Excimer Laser Ablation Technique
- Preparation of PbTiO_3 Thin Films by an Excimer Laser Ablation Technique with Second Laser Irradiation
- Microstructures and Electrical Properties of (Pb, La)TiO_3 Thin Films Grown on the Pt Electrodes with a Percolating Network Structure
- Characterization of Residues on Anhydrous HF Gas-Phase Etching of Sacrificial Oxides for Surface Micromachining
- Stress Characteristics of Multilayered Polysilicon Film for the Fabrication of Microresonators
- Investigation of Grain-Size Influence on the Ferroelectric-to-Paraelectric Phase Transition in BaTiO_3 Ceramics by Means of AC Calorimetry
- Simulation of Switching Properties of Ferroelectrics on the Basis of Dipole Lattice Model
- Grain Size Dependence of Switching Properties of Ferroelectric BaTiO_3 Ceramics
- Oxygen and Fluorine Treatment Effect on Silicon Surface Characterized by Infrared Reflection Absorption Spectroscopy
- Electron Emission frorm Lead-Zirconate-Titanate Ferroelectric Ceramic Induced by Pulse Electric Field ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Electron Emission from PZT Ceramic by External Pulsed Electric Fields : Pulse Voltage Dependence of Emitted Charge
- Preparation of PbTiO_3 Thin Film on Si by ArF Excimer Baser Ablation
- Electron Emission into Vacuum from Lead-Zirconate-Titanate Ferroelectric Ceramics Induced by Polarization Reversal
- In-Situ Characterization of Si Surface Oxidation by High-Sensitivity Infrared Reflection Spectroscopic Method
- Field-Excited Electron Emission from Ferroelectric Ceramic in Vacuum
- High-Sensitivity Infrared Characterization of Ultrathin SiO_2 Film by Grazing Internal Reflection Method
- PbTiO_3 Thin Films Deposited by Laser Ablation : Thin Films
- Study on Microstructures and Interdiffusion Behavior in Pt/Ti/SiO_2/Si and Pb(Zr, Ti)O_3/Pt/Ti/SiO_2/Si Multilayer Systems
- Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- Low-Voltage Operating Triode-Type Field Emission Displays Controlled by Amorphous-Silicon Thin-Film Transistors
- Fabrication of Lead Titanate Thin Film by Laser Ablation with Alternate Deposition of Lead Oxide and Titanium Oxide Precursors ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Preferentially (105)-Oriented SrBi2Ta2O9 Films Prepared by Laser Ablation Method
- Thermal and Electric Field Broadening in Electro-Optical Effect
- Electroreflectance in GaAs near the Fundamental Edge at 25°K
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Preparation of Bismuth Titanate Thin Films by Laser Ablation
- Preparation of SrBi_2Ta_2O_9 Films by Laser Ablation Method
- Bi_4Ti_3O_ Films Grown on SiO_2/Si at Low Temperature by Laser Ablation Method
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- Growth of SiO_2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Growth of Oriented Si Film on Quartz from Si_3H_8 by thermal and Photo-CVD Using a D_2 Lamp : Surfaces, Interfaces and Films
- SiO_2 Thin Film Prepared from Si_3H_8 and O_2 by Photo-CVD Using Double Excitation
- Preparation of SiO_2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect
- Low Temperature Growth of SiO_2 Thin Film by Double-Excitation Photo-CVD
- Photo-Induced Chemical Vapor Deposition of SiO_2 Film Using Direct Excitation Process by Deuterium Lamp