Preparation of SiO_2 Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect
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概要
- 論文の詳細を見る
Silicon dioxide thin films have been prepared at low temperatures from SiH_4 and O_2 by direct photo-induced CVD using a deuterium lamp. The growth rate is 75 Å/min at 84℃ while no growth occurs below 180℃ without deuterium lamp irradiation. UV and VUV light irradiation and an increase of the substrate temperature have effects of increasing the refractive index, and decreasing H incorporation and the amount of the oxide charge. The photo-CVD films deposited above 180℃ show refractive indices of 1.45-1.46. Annealing in an O_2 environment decreases the infrared absorptions due to Si-H stretching, Si-OH deformation and Si_2O_3 bondings as well as the oxide charge. The activation energies of the Si-H, the Si-OH deformation, the Si_2O_3 and the oxide charge obtained from the annealing characteristics are 0.18-0.19, 0.12, 0.19 and 0.12-0.13 eV, respectively. The reduction of Si-OH deformation absorption is considered to be closely related to the reduction of oxide charge.
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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TOYODA Yukio
Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.
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Toyoda Y
Chubu Univ. Aichi Jpn
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INOUE Kohji
Department of Electrical Engineering, Faculty of Engineering Schience, Osaka University
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TOYODA Yoshihiko
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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