SiO_2 Thin Film Prepared from Si_3H_8 and O_2 by Photo-CVD Using Double Excitation
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概要
- 論文の詳細を見る
Silicon dioxide thin films have been prepared at low temperatures from 25 to 390℃ from Si_3H_8 and O_2 gases by photo-CVD using the double excitation of VUV light from a D_2 lamp and UV light from a Hg lamp. Growth rate is 〜150 Å/min at 25℃ and decreases as the substrate temperature increases. The amount of Si-H and Si-OH, and the fixed-oxide-charge also decrease as the temperature increases. The film deposited at 260℃ shows small interface state density and the minimum is 3.6×10^<10>cm^<-2>eV^<-1> near the midgap.
- 社団法人応用物理学会の論文
- 1987-06-20
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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INOUE Kohji
Department of Electrical Engineering, Faculty of Engineering Schience, Osaka University
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FUJIKI Noriaki
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Fujiki Noriaki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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