Infrared Characterization of Interface State Reduction by F_2 Treatment in SiO_2/Si Structure using Photo-CVD SiO_2 Film
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概要
- 論文の詳細を見る
IR-ATR and IR transmission spectra of photo-CVD SiO_2 on Si have been measured to characterize the effect of F_2 treatment on the interface formation. IR-ATR spectra show that the Si-H bonds at the interface are reduced remarkably by the F_2 treatment. This reduction effect depends on the growth temperature, and the dependence is qualitatively similar to that of the interface states. IR transmission and XPS spectra show that the residual F in the SiO_2/ Si structure is not bonded to Si. It is considered from these measurements that the F_2 treatment activates the Si surface to form tight Si-O bonds.
- 社団法人応用物理学会の論文
- 1990-05-20
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Nakamura Masakazu
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Okuyama Masanori
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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HAMAKAWA Yoshihiro
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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NAKAMURA Masakazu
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University
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Nakamura Masakazu
Department of Applied Chemistry, Faculty of Engineering, Keio University
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