Growth of SiO_2 Thin Film by Selective Excitation Photo-CVD Using 123.6 nm VUV Light : Silicon Devices and Process Technologies(<Special Section>Solid State Devices and Materials 1)
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概要
- 論文の詳細を見る
A new technology for low-temperature growth of high-quality silicon dioxide (SiO_2) film on silicon has been developed. The technology is photo-CVD using 123.6 nm light of a Kr resonance lamp from Si_2H_6 and O_2, in which only Si_2H_6 can be selectively excited but not O_2. The amounts of Si-OH bondings in the SiO_2 films deposited by the 123.6 nm light are much lower than those by the other VUV lamps. The interface state density of the Si-MOS diode is extremely low, and its minimum value is 2×10^<10> cm^<-2> eV^<-1> near the Si midgap for the SiO_2 film deposited at a substrate temperature of 145℃.
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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INOUE Kohji
Department of Electrical Engineering, Faculty of Engineering Schience, Osaka University
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