Maida Osamu | Department Of Physical Science Graduate School Of Engineering Science Osaka University
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概要
- MAIDA Osamuの詳細を見る
- 同名の論文著者
- Department Of Physical Science Graduate School Of Engineering Science Osaka Universityの論文著者
関連著者
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Maida Osamu
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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KANASHIMA Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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MAIDA Osamu
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Okuyama M
Graduate School Of Engineering Science Osaka University
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Okada N
Nec Corp. Kanagawa Jpn
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Okada N
Honda Electronics Co. Ltd. Toyohashi Jpn
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Eriguchi K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Eriguchi Koji
Ulsi Process Technology Development Center Matsushita Electronics
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Fujimoto A
Wakayama National Coll. Technol. Wakayama Jpn
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Okada Norio
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Wada Hideo
Japan Defense Agency
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Wada Hideo
Technical Research And Development Institute Japan Defense Agency
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KANASHIMA Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okada Nagaya
Research Institute Of Electronics Shizuoka University:(present Address) Honda Electronics Co.
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Wada H
Japan Defense Agency
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Agata Masashi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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FUJIMOTO Akira
Dept. Electrical Engineering, Wakayama National College of Technology
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Fujimoto A
Department Of Electrical Engineering Wakayama National College Of Technology
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Eriguchi Koji
ULSI Process Tech. Dev. Ctr., Matsushita Electronics
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WADA HIDEO
Department of Pediatrics, School of Medicine, Faculty of Medicine, Kanazawa University
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Ueno Masato
Department Of Neurosurgery Osaka Neurological Institute
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Wada Hideo
Department Of Molecular And Laboratory Medicine Mie University Graduate School Of Medicine
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MAIDA Osamu
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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AGATA Masashi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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KOHMA Norinao
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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OHASHI Haruhiko
Experimental Facilities Division, Japan Synchrotron Radiation Research Institute
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KITAI Satoshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Maida Osamu
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Maida Osamu
The Institute Of Scientific And Industrial Research Osaka University
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Shibuya Akira
Department Of Immunology Institute Of Basic Medical Sciences And Center For Tara Graduate School Of
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Kitai Satoshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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AGATA Masashi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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WADA Hideo
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Agata Masashi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Wada Hideo
Department Of Internal Medicine Mie University School Of Medicine
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Shibuya Akira
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Maida Osamu
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Ohashi Haruhiko
Experimental Facilities Division, Japan Synchrotron Radiation Research Institute, Mikazuki, Sayo-gun, Hyogo 679-5198, Japan
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Kanashima Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Kohma Norinao
Department of Physical Science, Graduate School of Engineering Science, Osaka University, Machikaneyama-Cho, Toyonaka, Osaka 560-8531, Japan
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Wada Hideo
Department of Electronic Chemistry, Tokyo Institute of Technology at Nagatsuta
著作論文
- Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator