LPE Growth of Lattice-Matched InGaAsP on GaAs_<0.69>P_<0.31> Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Fujimoto A
Wakayama National Coll. Technol. Wakayama Jpn
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Fujimoto Akira
Central R & D Lab. Omron Tateisi Electronics Co.
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Takeuchi M
Nagoya Univ. Nagoya Jpn
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TAKEUCHI Masashi
Central R amp D Laboratory, Corporate Research and Development Headquarters, OMRON Corporation
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Shimura M
Tokyo Metropolitan Univ. Tokyo
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SHIMURA Mikihiko
Central R & D Laboratory, OMRON Tateisi Electronics Co
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WATANABE Hideaki
Central R & D Laboratory, OMRON Tateisi Electronics Co
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Fujimoto A
Department Of Electrical Engineering Wakayama National College Of Technology
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Takeuchi Manabu
Department Of Electrical And Electronic Engineering Ibaraki University
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Takeuchi Masashi
Central R & D Lab. Omron Tateisi Electronics Co.
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