Static Characteristics of Piezoelectric Thin Film Buckling Actuator

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概要

• 論文の詳細を見る

• We have developed a diaphragm piezoelectric microactuator. The diaphragm consists of a Pb(Zr, Ti)O_3 (PZT) thin film, electrode layers, an isolation layer and a Si substrate. The diaphragm is deflected by transverse stress in the PZT thin film which is fabricated by a sputtering and annealing process. The PZT thin film has a piezoelectric coefficient d_<31> of -100 pC/N, which is comparable to that of bulk PZT. A diaphragm deflection of 3 μm was obtained at an electric field of 16 V/μm.

• 社団法人応用物理学会の論文
• 1996-09-30

著者

• Sakata Minoru

  Central R & D Laboratory Omron Corporation

• TAKEUCHI Masashi

  Central R amp D Laboratory, Corporate Research and Development Headquarters, OMRON Corporation

• WAKABAYASHI Shuichi

  Central R & D Laboratory, OMRON Corporation

• GOTO Hiroshi

  Central R & D Laboratory, OMRON Corporation

• YADA Tsuneji

  Central R & D Laboratory, OMRON Corporation

• Yada Tsuneji

  Central R & D Laboratory Omron Corporation

• Wakabayashi Shuichi

  Central R & D Laboratory Omron Corporation

• Goto Hiroshi

  Central R & D Laboratory Omron Corporation

• Takeuchi Masashi

  Central R & D Laboratory Omron Corporation

• Takeuchi Masashi

  Central R & D Lab. Omron Tateisi Electronics Co.

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• Static Characteristics of Piezoelectric Thin Film Buckling Actuator
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