A New Structure GaAlAs-GaAs Device Uniting LED and Phototransistor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1982-12-20

著者

• YAMASHITA Shigeaki

  Central R & D Lab. OMRON Tateisi Electronics Co.

• Takeuchi Masashi

  Central R & D Lab. Omron Tateisi Electronics Co.

• SATOH Fumihiko

  Central R & D Lab., OMRON Tateisi Electronics Co.

• Satoh Fumihiko

  Central R & D Lab. Omron Tateisi Electronics Co.

関連論文

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• LPE Growth of Lattice-Matched InGaAsP on GaAs_P_ Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers
• CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
• Liquid-Phase Epitaxial Growth of Al_xGa_As_P_y on (100) GaAs_P_
• Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP Lasers
• LPE Growth and Pulsed Room Temperature Laser Operation of In_Ga_xAs_zP_ on (100) GaAs_P_y (y≅0.39)
• Static Characteristics of Piezoelectric Thin Film Buckling Actuator
• A New Structure GaAlAs-GaAs Device Uniting LED and Phototransistor

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