Liquid-Phase Epitaxial Growth of Al_xGa_<1-x>As_<1-y>P_y on (100) GaAs_<0.61>P_<0.39>

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概要

• 論文の詳細を見る

• The growth conditions of Al_xGa_<1-x>As_<1-y>P_y on (100) GaAs_<0.61>P_<0.39> substrate by the step-cooling liquid-phase epitaxial method have been investigated. The growth conditions and properties of Al_xGa_<1-x>As_<1-y>P_y epitaxial layers are reported. Epitaxial layers with mirror-like surfaces and flat interfaces were obtained at several compositions of Al_xGa_<1-x>As_<1-y>P_y (x=0.28 y=0.38, s=0.47 y=0.36). The distribution coefficients of Zn and Te in Al_<0.28>Ga_<0.72>As_<0.62>P_<0.38> at 790℃ were approximately 0.017 and 0.09, respectively. The activation energy for the free-hole generation of Zn-doped Al_<0.28>Ga_<0.72>As_<0.62>P_<0.38> was about 26 meV.

• 社団法人応用物理学会の論文
• 1983-01-20

著者

• Fujimoto Akira

  Central R & D Lab. Omron Tateisi Electronics Co.

• SHIMURA Mikihiko

  Central R & D Laboratory, OMRON Tateisi Electronics Co

• HASUDA Hirohiko

  Central R & D Lab. OMRON Tateisi Electronics Co.

• YAMASHITA Shigeaki

  Central R & D Lab. OMRON Tateisi Electronics Co.

• Shimura Mikihiko

  Central R & D Lab. Omron Tateisi Electronics Co.

• Yamashita Shigeaki

  Central R & D Lab. Omron Tateisi Electronics Co.

• Hasuda Hirohiko

  Central R & D Lab. Omron Tateisi Electronics Co.

関連論文

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• CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
• Liquid-Phase Epitaxial Growth of Al_xGa_As_P_y on (100) GaAs_P_
• Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP Lasers
• LPE Growth and Pulsed Room Temperature Laser Operation of In_Ga_xAs_zP_ on (100) GaAs_P_y (y≅0.39)
• A New Structure GaAlAs-GaAs Device Uniting LED and Phototransistor

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