Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP Lasers

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概要

• 論文の詳細を見る

• InGaAsP/InGaAsP double-heterostructure laser diodes with wavelength as short as 621.4 nm at room temperature were demonstrated and their growth conditions were described. The laser diodes were constructed by InGaAsP grown on GaAs_<0.61>P_<0.39> substrates by liquid phase epitaxy. Their threshold current densities were approximately 1.19×10^5 A/cm^2 in pulsed room temperature operation.

• 社団法人応用物理学会の論文
• 1982-08-20

著者

• Fujimoto Akira

  Central R & D Lab. Omron Tateisi Electronics Co.

• SHIMURA Mikihiko

  Central R & D Laboratory, OMRON Tateisi Electronics Co

• YAMASHITA Shigeaki

  Central R & D Lab. OMRON Tateisi Electronics Co.

• YASUDA Hirohiko

  Central R & D Laboratory OMRON Tateisi Electronics Co.

• Shimura Mikihiko

  Central R & D Lab. Omron Tateisi Electronics Co.

• Yamashita Shigeaki

  Central R & D Lab. Omron Tateisi Electronics Co.

• Yasuda Hirohiko

  Central R & D Laboratory Omron Tateisi Electronics Co.

関連論文

• Liquid Phase Epitaxial Growth of lnGaAsP on GaAs_P_y Substrates (y=0.3l and 0.39)
• LPE Growth of Lattice-Matched InGaAsP on GaAs_P_ Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers
• CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
• Liquid-Phase Epitaxial Growth of Al_xGa_As_P_y on (100) GaAs_P_
• Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP Lasers
• LPE Growth and Pulsed Room Temperature Laser Operation of In_Ga_xAs_zP_ on (100) GaAs_P_y (y≅0.39)
• A New Structure GaAlAs-GaAs Device Uniting LED and Phototransistor

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