SHIMURA Mikihiko | Central R & D Laboratory, OMRON Tateisi Electronics Co
スポンサーリンク
概要
関連著者
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Fujimoto Akira
Central R & D Lab. Omron Tateisi Electronics Co.
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SHIMURA Mikihiko
Central R & D Laboratory, OMRON Tateisi Electronics Co
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Fujimoto A
Wakayama National Coll. Technol. Wakayama Jpn
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Takeuchi M
Nagoya Univ. Nagoya Jpn
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TAKEUCHI Masashi
Central R amp D Laboratory, Corporate Research and Development Headquarters, OMRON Corporation
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Shimura M
Tokyo Metropolitan Univ. Tokyo
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WATANABE Hideaki
Central R & D Laboratory, OMRON Tateisi Electronics Co
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Fujimoto A
Department Of Electrical Engineering Wakayama National College Of Technology
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Takeuchi Manabu
Department Of Electrical And Electronic Engineering Ibaraki University
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YAMASHITA Shigeaki
Central R & D Lab. OMRON Tateisi Electronics Co.
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Shimura Mikihiko
Central R & D Lab. Omron Tateisi Electronics Co.
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Yamashita Shigeaki
Central R & D Lab. Omron Tateisi Electronics Co.
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Takeuchi Masashi
Central R & D Lab. Omron Tateisi Electronics Co.
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YASUDA Hirohiko
Central R & D Laboratory OMRON Tateisi Electronics Co.
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Yasuda Hirohiko
Central R & D Laboratory Omron Tateisi Electronics Co.
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HASUDA Hirohiko
Central R & D Lab. OMRON Tateisi Electronics Co.
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Hasuda Hirohiko
Central R & D Lab. Omron Tateisi Electronics Co.
著作論文
- Liquid Phase Epitaxial Growth of lnGaAsP on GaAs_P_y Substrates (y=0.3l and 0.39)
- LPE Growth of Lattice-Matched InGaAsP on GaAs_P_ Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers
- CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
- Liquid-Phase Epitaxial Growth of Al_xGa_As_P_y on (100) GaAs_P_
- Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP Lasers
- LPE Growth and Pulsed Room Temperature Laser Operation of In_Ga_xAs_zP_ on (100) GaAs_P_y (y≅0.39)