LPE Growth and Pulsed Room Temperature Laser Operation of In_<1-x>Ga_xAs_zP_<1-z> on (100) GaAs_<1-y>P_y (y≅0.39)

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概要

• 論文の詳細を見る

• Lattice-matched In_<1-x>Ga_xAs_zP_<1-z> epitaxial layers with various compositions (0.72≦x≦0.89, 0.03≦z≦0.37) have been grown on VPE (100) GaAs_<1-y>P_y (y≅0.39) by ramp cooling LPE (initial supercooling 10℃, growth temperature 790℃ and cooling rate 0.5℃/min). Energy band gaps of these alloys have been determined by photoluminescence spectra at room temperature. Double heterostructures grown on the basis of conditions as presented here have lased at approximately 640 nm at room temperature. The characteristic temperature of the threshold current density is as large as 90 K.

• 社団法人応用物理学会の論文
• 1982-06-20

著者

• Fujimoto Akira

  Central R & D Lab. Omron Tateisi Electronics Co.

• SHIMURA Mikihiko

  Central R & D Laboratory, OMRON Tateisi Electronics Co

• YAMASHITA Shigeaki

  Central R & D Lab. OMRON Tateisi Electronics Co.

• YASUDA Hirohiko

  Central R & D Laboratory OMRON Tateisi Electronics Co.

• Shimura Mikihiko

  Central R & D Lab. Omron Tateisi Electronics Co.

• Yamashita Shigeaki

  Central R & D Lab. Omron Tateisi Electronics Co.

• Yasuda Hirohiko

  Central R & D Laboratory Omron Tateisi Electronics Co.

関連論文

• Liquid Phase Epitaxial Growth of lnGaAsP on GaAs_P_y Substrates (y=0.3l and 0.39)
• LPE Growth of Lattice-Matched InGaAsP on GaAs_P_ Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers
• CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
• Liquid-Phase Epitaxial Growth of Al_xGa_As_P_y on (100) GaAs_P_
• Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP Lasers
• LPE Growth and Pulsed Room Temperature Laser Operation of In_Ga_xAs_zP_ on (100) GaAs_P_y (y≅0.39)
• A New Structure GaAlAs-GaAs Device Uniting LED and Phototransistor

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