Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg1/3Nb2/3)O3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition

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Pb(Mg1/3Nb2/3)O3 films with film thickness as ranging from 100 to 2000 nm were grown on (100)cSrRuO3$\parallel$(100)SrTiO3 substrates by pulsed metal organic chemical vapor deposition. (100)-oriented epitaxial films were grown regardless of film thickness. The tetragonal symmetry of 100-nm-thick films was found to have changed to an almost cubic symmetry having almost equal out-of-plane and in-plane lattice parameters with increasing film thickness. The room-temperature relative dielectric constant $\varepsilon_{\text{r}}$ at 10 kHz increased almost linearly from 630 to 3100 with increasing film thickness, suggesting its strong thickness dependence on $\varepsilon_{\text{r}}$, which is different from that observed in the Pb(Zr0.65Ti0.35)O3 films with a rhombohedral symmetry.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2006-10-25