Dielectric Property of Silicate-Doped CaBi4Ti4O15 Thin Films
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概要
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Thin films of silicate-doped CaBi4Ti4O15 were fabricated to enhance the insulating property of one-axis-oriented CaBi4Ti4O15 films under an applied electric field. The crystalline phase of CaBi4Ti4O15, a type of bismuth layer-structured dielectric (BLSD) compound, was successfully grown on (100)LaNiO3/(111)Pt/TiO2/(100)Si with the preferential orientation of the (001) plane by the addition of bismuth silicate with a nominal composition of Bi12SiO20 up to 1.00%. The crystallographic orientation of the (001)BLSD plane normal to the substrate surface was degraded by excessive bismuth silicate addition above 1.50%. The breakdown electric field was increased by bismuth silicate addition up to 2.00% without the degraded relative dielectric permittivity (\varepsilon_{\text{r}}) of approximately 230. The bismuth silicate could precipitate between the grain boundaries in the CaBi4Ti4O15 films without an interface reaction or a solid solution that enhances the insulating behavior of the BLSD films.
- 2012-09-25
著者
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KIMURA Junichi
Department of Chemistry, Nagoya University
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Uchida Hiroshi
Department Of Anesthesia Tottori Prefectural Central Hospital
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Kondoh Yohta
Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Ogawa Shota
Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
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