Preparation of (001)-Oriented CaBi4Ti4O15 and SrBi4Ti4O15 Films Using LaNiO3 Nucleation Layer on Pt-passivated Si Wafer
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概要
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Thin films of CaBi4Ti4O15 and SrBi4Ti4O15 with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a (100)LaNiO3/(111)Pt/(100)Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric (BLSDs). The ($00l$) planes of a BLSD crystal were preferentially oriented to the surface of the (100)LaNiO3/(111)Pt/(100)Si substrate, which is ascribed to the lattice matching between pseudo perovskite blocks in the BLSD crystal and the (100)LaNiO3 plane with a perovskite structure. Frequent heat treatment for crystallization, i.e., once after each coating, also enhanced the degree of crystallinity and crystal orientation of the BLSD films. The dielectric constants ($\varepsilon_{\text{r}}$) of SrBi4Ti4O15 and CaBi4Ti4O15 thin films were approximately 250 at room temperature. The $\varepsilon_{\text{r}}$ values of both films increased with ambient temperature. The variations in capacitance in the temperature range from 25 to 200 °C were approximately 3 and 5% respectively, which were significantly smaller than that in the (Ba,Sr)TiO3 thin film.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-09-25
著者
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Koda Seiichiro
Department Of Chemical Engineering Facutly Of Engineering The University Of Tokyo
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Uchida Hiroshi
Department Of Anesthesia Tottori Prefectural Central Hospital
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Mizutani Yuki
Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
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Uchida Hiroshi
Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
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Koda Seiichiro
Department of Materials and Life Sciences, Sophia University, Chiyoda, Tokyo 102-8554, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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