MOCVD Growth of Bi1.5Zn1.0Nb1.5O7 (BZN) Epitaxial Thin Films and Their Electrical Properties
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概要
- 論文の詳細を見る
Bi1.5Zn1.0Nb1.5O7 (BZN) epitaxial thin films were prepared on $(111)\text{Pt}\parallel(001)\text{Al$_{2}$O$_{3}$}$ substrates at 500°C by metal organic chemical vapor deposition (MOCVD). The electrical properties of the as-deposited films were investigated by comparing them with those of the (111)-one-axis-oriented films prepared on (111)Pt/TiO2/SiO2/(100)Si substrates for making a Pt/BZN/Pt capacitor structure. The relative dielectric constant of the epitaxial film was almost the same as that of the one-axis-oriented one, but its changes with frequency dependence and $\tan\delta$ were smaller than those of the one-axis-oriented one.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-09-15
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Okamoto Shoji
Department Of Dermatology School Of Medicine Chiba University
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Suzuki Muneyasu
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Koda Seiichiro
Department Of Chemical Engineering Facutly Of Engineering The University Of Tokyo
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Uchida Hiroshi
Department Of Anesthesia Tottori Prefectural Central Hospital
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Okaura Shingo
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Uchida Hiroshi
Department of Chemistry, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan
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Suzuki Muneyasu
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Okaura Shingo
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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