Formation of BiFeO3–BiScO3 Thin Films and Their Electrical Properties

概要

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($1-x$)BiFeO3–$x$BiScO3 ($x=0--0.5$) thin films were prepared on (111)Pt/TiO2/SiO2/(100)Si substrates by chemical solution deposition, and their crystal structure, leakage current density, and ferroelectric properties were investigated. X-ray diffraction analysis revealed that the single-phase perovskite was obtained for $x$ from 0 to 0.4. The lattice parameter of the $a$-axis increased monotonically with increasing $x$, whereas that of the $c$-axis decreased. The surface of the films became smooth for the increase in $x$ of up to 0.15, and the leakage current density at room temperature decreased to $5.1\times 10^{-8}$ A/cm2 at 100 kV/cm. Well-saturated polarization and electric field hysteresis loops were obtained for $x=0.15$ and 0.3, and the remanent polarization ($P_{\text{r}}$) and coercive field ($E_{\text{c}}$) of the films for $x=0.15$ and 0.3 were 66 and 70 μC/cm2 and 525 and 545 kV/cm, respectively.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-09-30