Structural and Electrical Properties of Polycrystalline Bi4-xNdxTi3O12 Ferroelectric Thin Films with in-Plane $c$-Axis Orientations

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Bi4-xNdxTi3O12 (BNT, $x=0.25$, 0.5, 0.75) thin films with in-plane $c$-axis orientations were grown on IrO2/Si from solution route and their electrical properties were studied. The remanent polarization exhibited a broad peak against $x$ with the maximum value of $2P_{\text{r}}=47$ μC/cm2 at $x=0.5$. The orthorhombic lattice parameters and Curie temperature $T_{\text{C}}$ were measured for BNT powders prepared from the same coating solutions. Both orthorhombic anisotropy $a/b$ and $T_{\text{C}}$ monotonically decreased with increasing $x$. Irrespective of $x$, leakage current density $J<1.5\times 10^{-7}$ A/cm2 under 100 kV/cm was observed by optimizing film growth temperature $T_{\text{G}}=700$°C, even though the Bi2O2 blocking layers aligned perpendicular to the film.
Japan Society of Applied Physicsの論文
2005-02-10