Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)
スポンサーリンク
概要
- 論文の詳細を見る
Yttria-stabilized zirconia (YSZ) films were prepared on Si(111) substrates with a slow deposition rate. X-ray diffraction clearly showed epitaxial growth of YSZ(111) film on Si(111), the X-ray $\phi$ scan of 3-fold symmetry confirmed single domain YSZ(111) to be rotated 180° about the surface normal from cubic on cubic relation. In contrast, single domain Si(111) films showed cubic on cubic relation with the YSZ(111) substrate.
- 2006-12-25
著者
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OHYA Seishiro
Kanagawa Industrial Technology Research Institute
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OGUNI Taku
Tokyo Polytechnic University
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SEO Koichi
PANAlytical
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Sawada Yutaka
Tokyo Institute Of Polytechnique
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Hirabayashi Yasuo
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Hirabayashi Yasuo
Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan
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Kaneko Satoru
Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan
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Akiyama Kensuke
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Yoshimoto Mamoru
Department of Innovative & Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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ITO Takeshi
Kanagawa Industrial Technology Center
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Oguni Taku
Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan
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Sawada Yutaka
Tokyo Polytechnic University, 1583 Iiyama, Atsugi, Kanagawa 243-0297, Japan
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Ohya Seishiro
Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan
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Seo Koichi
PANAlytical, 1-7-3 Hamamatsu, Minato-ku, Tokyo 105-0013, Japan
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