Epitaxial Indium Tin Oxide Film Deposited on Sapphire Substrate by Solid-Source Electron Cyclotron Resonance Plasma

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概要

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• Indium tin oxide (ITO) thin films were epitaxially grown on sapphire substrates by solid-source electron cyclotron resonance (ECR) plasma deposition. Compared with the other methods such as sputtering and evaporation methods, the ECR plasma method resulted in a flat surface and a low resistivity with a relatively low substrate temperature. The surface roughness was strongly dependent on the ratio of oxygen gas flow during deposition. With optimal deposition conditions, the ITO thin film epitaxially grew on a c-plane sapphire substrate with twelvefold symmetry. The surface roughness and resistivity were estimated to be 0.4 nm and 1.4\times 10^{-4} \Omega\cdotcm, respectively. The X-ray rocking curve revealed 0.025° of full width at half maximum (FWHM) on the epitaxial ITO thin film. The ITO film deposited on an epitaxial GaN(001) layer on a c-plane sapphire substrate showed sixfold in-plane symmetry, indicating the epitaxial growth of ITO(111) on the GaN(001)/c-plane sapphire substrate.

• 2012-01-25

著者

• IWAYA Motoaki

  Department of Electrical and Electronic Engineering, Meijo University

• Kaneko Satoru

  Kanagawa Industrial Technol. Center Kanagawa Jpn

• SOGA Masayasu

  Kanagawa Industrial Technology Research Institute

• Kaneko Satoru

  Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, Ebina, Kanagawa 243-0435, Japan

• Akiyama Kensuke

  Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan

• Yoshimoto Mamoru

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Yoshimoto Mamoru

  Department of Innovative & Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Torii Hironori

  MES AFTY Corporation, Hachioji, Tokyo 192-0918, Japan

• Amazawa Takao

  MES AFTY Corporation, Hachioji, Tokyo 192-0918, Japan

• Soga Masayasu

  Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, Ebina, Kanagawa 243-0435, Japan

• Iwaya Motoaki

  Department of Electrical and Electronic Engineering, Meijo University, Nagoya 468-8502, Japan

• Soga Masayasu

  Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

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