Epitaxial Growth of (100)-Oriented $\beta$-FeSi2 Thin Films on Insulating Substrates
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概要
- 論文の詳細を見る
Epitaxial $\beta$-FeSi2 thin films were grown on insulating substrates by rf magnetron sputtering. (100)-Oriented $\beta$-FeSi2 films were epitaxially grown on (100) yttria-stabilized zirconia (YSZ) and (001) Al2O3 substrates. The epitaxial relationship of the $\beta$-FeSi2 film with the (100) YSZ substrate was the same as that with the (100) Si substrate. On the (001) Al2O3 substrate, the epitxial film had a threefold symmetry domain structure, which has not been reported on a film grown on a Si substrate. Epitaxial growth of (100)-oriented $\beta$-FeSi2 film was affected by not only lattice mismatch but also atomic or ionic matching between $\beta$-FeSi2 and substrate and requires substrates consisting of either a single element or only cations.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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Kimura Takeshi
Department Of Cardiology Kobe City Medical Center General Hospital
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Kaneko Satoru
Kanagawa Industrial Technology Research Institute, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Akiyama Kensuke
Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina, Kanagawa 243-0435, Japan
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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KIMURA Takeshi
Department of Applied Chemistry and Molecular Science, Faculty of Engineering, Iwate University
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