Synthesis and Thermal Conductivity of Boron-Doped and 12C-Enriched Diamond Single Crystals
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概要
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Boron-doped 12C-enriched diamond single crystals (about 3 mm; 99.97% 12C) were successfully synthesized at 6.1 GPa and 1430 °C by the high-pressure and high-temperature method using a starting mixture of boron powder and 12C-enriched pyrolytic carbon powder. The thermal conductivities of these crystals were determined to be 30.6 W/cm$\cdot$K (3.4 ppm effective acceptor concentration) and 27.1 W/cm$\cdot$K (34 ppm effective acceptor concentration; highly doped) by a cut-bar steady-state conduction technique. The conductivity of the highly-doped crystals was 9% lower than that of similarly synthesized non-doped 12C-enriched crystals (99.97% 12C), whereas those of the boron-doped 12C-enriched crystals were higher than that of similarly synthesized non-doped naturally abundant crystals (99.0% 12C), indicating the isotope effect in the boron-doped 12C-enriched crystals.
- Japan Society of Applied Physicsの論文
- 2007-08-25
著者
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Horiuchi Kenji
Product Dev. Dep. Tokyo Gas Co. Ltd.
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Yoshimoto Mamoru
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Nakamura Kazuo
Product Development Department Tokyo Gas Co. Ltd.
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Yamashita Satoshi
Product Development Department, Tokyo Gas Co., Ltd., Arakawa-ku, Tokyo 116-0003, Japan
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Kataoka Kazuhiro
R&D Department, Tokyo Gas Chemicals Co., Ltd., Minato-ku, Tokyo 105-0011, Japan
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Kataoka Kazuhiro
R&D Department, Tokyo Gas Chemicals Co., Ltd., Minato-ku, Tokyo 105-0011, Japan
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Yoshimoto Mamoru
Department of Innovative & Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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