Fabrication of Ni/Al₂O₃/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/Al₂O₃/NiO Trilayered Epitaxial Thin Film

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概要

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• The fabrication of a Ni/Al₂O₃/Ni heteroepitaxial junction was achieved by the post-hydrogen reduction of a NiO/Al₂O₃/NiO trilayered epitaxial thin film grown by pulsed laser deposition. The top and bottom NiO layers were selectively reduced to Ni metal layers showing epitaxial relationships, while the Al₂O₃ interlayer remained. The crystallographic and interfacial characteristics were confirmed by X-ray diffraction analysis, reflection high-energy electron diffraction, and transmission electron microscopy. The fabricated Ni/Al₂O₃/Ni heteroepitaxial junction exhibited atomically sharp interfaces with no amorphous boundary layer.

• 2011-09-25

著者

• Kato Yushi

  Department Of Electronics And Informatics Faculty Of Engineering Toyama Prefectural University

• Kaneko Satoru

  Kanagawa Industrial Technol. Center Kanagawa Jpn

• Yamauchi Ryosuke

  Department Of Innovative And Engineered Materials Tokyo Institute Of Technology

• SUZUKI Toshimasa

  Taiyo Yuden Co Ltd, R&D Center

• Matsuda Akifumi

  Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-R3-6 Nagatsuta-cho, Midori-ku, Yokohama 226-8503, Japan

• Yoshimoto Mamoru

  Department of Innovative & Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Mitsuhashi Masahiko

  Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan

• Kobayashi Keisuke

  Taiyo Yuden Co., Ltd., Takasaki, Gunma 370-3347, Japan

• Arai Hideki

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Hosaka Makoto

  Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Koyama Kohji

  Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan

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