高放射小型赤外線光源用薄膜の開発

概要

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A platinum infrared emitter by Joules heat, about 0.5×0.5mm2 of a pattern size, has been fabricated with micro lithography process of the platinum film on a quartz glass substrate, A hafnium oxide buffer film was used. The heat characteristics of the emitter were examined with thermography and a spectroradiometer. The maximum temperature of the heating emitter is confirmed to be 600°C at least. The platinum film emitter has the emissivity less than 0.1 and is nearly equivalent to gray body in wavelength 4-14μm. The emissivities of ceramics films on the platinum film were investigated to obtain the higher emissivity. The emissivities of oxide ceramics thin films are different from that of bulk targets and less than them. In Corning 7059 thin films, however, the higher emissivity values rather than that of the target is obtained at film thickness 6.7μm in wavelength 7-11μm. The highest value of emissivity of the thick film was 0.96 at wavelength 9.5μm.
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