Room-Temperature Epitaxial Growth of (Li,Ni)O Thin Film with Li Content up to 60 mol %
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概要
- 論文の詳細を見る
NiO thin films containing up to 60 mol % Li were deposited on an ultra smooth sapphire (0001) substrate at room-temperature (RT) by the pulsed laser deposition (PLD) process. From in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD), it was found that the cubic NiO thin film containing 60 mol % Li, deposited at RT, could be epitaxially grown with (111) orientation; however the film became polycrystalline when deposited at 200 °C under the same atmosphere. These results indicate the possible exploration of novel growth of the oxide films using RT PLD process.
- 2010-10-25
著者
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Kato Yushi
Department Of Electronics And Informatics Faculty Of Engineering Toyama Prefectural University
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Kaneko Satoru
Kanagawa Industrial Technol. Center Kanagawa Jpn
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Shiraishi Naoki
Department Of Anatomy Kyorin University School Of Medicine
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Kobayashi Susumu
Toshima Manufacturing Co. Ltd.
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Tsuchimine Nobuo
Toshima Manufacturing Co. Ltd.
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Yoshimoto Mamoru
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Yoshimoto Mamoru
Department of Innovative & Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Mitsuhashi Masahiko
Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan
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Soga Masayasu
Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, Ebina, Kanagawa 243-0435, Japan
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Arai Hideki
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Soga Masayasu
Kanagawa Industrial Technology Center, Kanagawa Prefectural Government, 705-1 Shimo-Imaizumi, Ebina, Kanagawa 243-0435, Japan
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Shiraishi Naoki
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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