Low-Temperature Heteroepitaxial Growth of $\alpha$-Al2O3 Thin Films on NiO Layers by Pulsed Laser Deposition
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概要
- 論文の詳細を見る
We investigated the growth of epitaxial $\alpha$-Al2O3 thin films on NiO layers at a low-temperature of 400 °C by pulsed laser deposition (PLD). Fabricated films were characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). During deposition, a plasma plume was analyzed by optical emission spectrometry. We found that the crystal growth behavior depends greatly on the laser fluence applied during deposition. $\alpha$-Al2O3 layers were grown epitaxially with high laser fluence (4 J/cm2). In contrast, mixed-phase $\gamma$- and $\alpha$-Al2O3 films and amorphous Al2O3 films were obtained with lower laser fluences (3 and 2 J/cm2, respectively).
- The Japan Society of Applied Physicsの論文
- 2009-08-25
著者
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Yoshimoto Mamoru
Department of Innovative & Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Akita Yasuyuki
Department of Innovative & Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Hosaka Makoto
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sugimoto Yuki
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Koyama Koji
Crystal Growth Laboratory, Namiki Precision Jewel Co., Ltd., Adachi, Tokyo 123-8511, Japan
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Akita Yasuyuki
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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