Low-Temperature Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane (Si(NCO)_4)
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概要
- 論文の詳細を見る
Deposition characteristics and step coverage of low-temperature chemical vapor deposition siliocn dioxide (CVD SiO_2) using tetra-isocyanate-silane (Si(NCO)_4; TICS) and H_2O have been investigated for application to interlayer dielectric films for advanced VLSI. The deposition rate was 13 nm/min at 100℃. The rate rapidly decreased with the increasing deposition temperature. It was determined by partial pressure rather than by flow rate of material gases. The step coverage showed a conformal profile.
- 社団法人応用物理学会の論文
- 1994-10-15
著者
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Taniguchi Hitoshi
Department Of Chemistry Faculty Of Liberal Arts Yamaguchi University
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Taniguchi Hitoshi
Department Of Physical Electronics Tokyo Institute Of Technology
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