Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Idris I
Department Of Physical Electronics Tokyo Institute Of Technology
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SUGIURA Osamu
Department of Physical Electronics, Tokyo Institute of Technology
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杉浦 修
Tokyo Inst. Technol. Tokyo Jpn
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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IDRIS Irman
Department of Physical Electronics, Tokyo Institute of Technology
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Idris Irman
Department Of Physical Electronics Tokyo Institute Of Technology
関連論文
- マイクロエレクトロニクス学生実験 (基礎研究特集号) -- (基礎研究と大学教育)
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- Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films
- Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas : Hydrogen Azide
- Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors
- The Effects of Hot Ion-Implantation on the Electrical Properties of Amorphous-Silicon Films Produced by Chemical-Vapor-Deposition Method
- Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors : The Influence of the Amorphous Silicon Deposition Temperature
- Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
- Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films
- Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
- Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane
- Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- アモルファスシリコン薄膜トランジスタへのポスト水素化の効果
- TICS/H_2O系SiO_2CVDによる層間絶縁膜形成法
- Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application
- Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films
- アモルファスシリコン電界効果トランジスタの不純物添加による特性制御
- Electronic Structures of Si-Based Manmade Crystals
- Newly Designed Hg Cell for Molecular Beam Epitaxy Growth of CdHgTe
- A New Thermal-Oxidation Method for III-V Semiconductors
- Film Characteristics of Low-Temperature Plasma-Enhanced Chemical Vapor Deposition Silicon Dioxide Using Tetraisocyanatesilane and Oxygen
- High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
- High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films
- Fully Self-Aligned Amorphous-Silicon MUS Transistors
- A Novel Atomic Layer Epitaxy Method of Silicon
- Hydrogen-Free Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane (Si(NCO)_4)
- A Deposition Mechanism of SiO_2 Chemical Vapor Deposition Using Tetra-Isocyanate Silane and Water
- Transient Temperature Profiles in Silicon Films during Pulsed Laser Annealing
- On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
- Theoretical Calculations for the Elimination of Silanol and Decrease in Dielectric Constant
- TICS/H_2O系SiO_2 CVDの堆積モデル
- Ultra-Thin Amorphous-Silicon Transistors Fabricated by Two-Step Deposition Method
- Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition
- A Novel Post-Hydrogenation Process for Chemical-Vapor-Deposited a-Si Thin-Film Transistors
- Homoepitaxial Growth of InSb by Vacuum Metal-Organic Chemical Vapor Deposition
- Low-Temperature Chemical Vapor Deposition of Silicon Dioxide Using Tetra-isocyanate-silane (Si(NCO)_4)
- Evaluation of Mercaptobenzothiazole Anticorrosive Layer on Cu Surface by Spectroscopic Ellipsometry
- Evaluation of Cu Ion Concentration Effects on Cu Etching Rate in Chemical-Mechanical Polishing Slurry