Analytical Study on a Single Electron Device with Two Islands Connected to One Gate Electrode
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概要
- 論文の詳細を見る
We have studied a double-dot single electron device that includes three tunnel junctions connecting a source, two islands and a drain, and a gate electrode capacitively connected to the two islands. Analytical solutions for voltage distribution and Coulomb blockade conditions were derived for the double-dot device with a symmetrical equivalent circuit by solving equations algebraically. With the help of derived formulas, stability diagrams for the device were drawn and the device operation was investigated in detail. Large and small rhombic stability diagrams are arranged alternately along the $V_{\text{g}}$ axis. Large rhombic diagrams change to hexagonal shape, depending on a ratio of capacitances. A single electron can transfer from the source to the drain through the islands, that is, the device operates as a single electron transistor. The stability diagrams suggested that periodic double peaks of the drain current would appear. We also proved that this device cannot operate as a single electron turnstile.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-12-25
著者
-
Imai Shigeru
Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Kawamura Daichi
Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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