Light-Absorptive Underlayer-Enhanced Superlateral Growth in Excimer Laser Crystallization of Amorphous Silicon Film
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概要
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A new method for the excimer laser crystallization of a Si thin film was implemented and realized, in which the proposed sample structure was a Si film/buffer film/light-absorptive (LA) film/glass-stacked structure, with the irradiation of the laser light from underneath a substrate. The absorption coefficient $\alpha$ of the LA film was shown to be essential in this method. The superlateral growth (SLG) grain diameter increased with $\alpha$ and became 10 μm at $\alpha=12000$ cm-1, which is tenfold larger than these at $\alpha=0$ cm-1 and in conventional front-side laser irradiation. However, when $\alpha$ was further increased to 18000 cm-1, the Si film could not be completely melt, and laterally directed fine grains were observed with a progress distance of 15 μm, which is likely due to laterally explosive crystallization.
- 2007-04-15
著者
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Yeh Wenchang
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Taipei 106, Taiwan, Republic of China
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Niu Ingchieh
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan
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Huang Hsiangen
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan
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Chen Chienchou
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan
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Yeh Wenchang
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan
関連論文
- Proposed Sample Structure for Marked Enlargement of Excimer-Laser-Induced Lateral Grain Growth in Si Thin Films
- Growth Rate Measurement of Lateral Grains in Silicon Film During Excimer Laser Annealing
- Light-Absorptive Underlayer-Enhanced Superlateral Growth in Excimer Laser Crystallization of Amorphous Silicon Film