Growth Rate Measurement of Lateral Grains in Silicon Film During Excimer Laser Annealing
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概要
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Direct measurement of the liquid/solid interface position history of super-lateral growth (SLG) on a silicon thin film during excimer laser crystallization was carried out for the first time. Unidirectional lateral grains were grown periodically, and by measuring the intensity of zero-order diffraction laser light, we obtained the position history of the moving solid/melt interface. The result showed that SLG growth rate was constant at 5 m/s, regardless of the supercooling degree of the Si melt.
- 2007-07-25
著者
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Yeh Wenchang
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Taipei 106, Taiwan, Republic of China
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Yeh Wenchang
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan
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Ke Dunyuan
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Taipei 106, Taiwan, Republic of China
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Zhuang Chun-Jun
Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Taipei 106, Taiwan, Republic of China
関連論文
- Proposed Sample Structure for Marked Enlargement of Excimer-Laser-Induced Lateral Grain Growth in Si Thin Films
- Growth Rate Measurement of Lateral Grains in Silicon Film During Excimer Laser Annealing
- Light-Absorptive Underlayer-Enhanced Superlateral Growth in Excimer Laser Crystallization of Amorphous Silicon Film