Diode-End-Pumped Continuous-Wave and Q-Switched Nd:GdVO_4/KTP Laser at 671nm
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
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Zhang H
Tsinghua Univ. Beijing Chn
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Wang J
State Key Laboratory Of Crystal Materials Shandong University
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DU Chenlin
State Key Laboratory of Crystal Materials, Shandong University
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QIN Lianjie
State Key Laboratory of Crystal Materials, Shandong University
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ZHANG Huaijin
State Key Laboratory of Crystal Materials, Shandong University
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MENG Xianlin
State Key Laboratory of Crystal Materials, Shandong University
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XU Guibao
State Key Laboratory of Crystal Materials, Shandong University
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WANG Zhengping
State Key Laboratory of Crystal Materials, Shandong University
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XU Xinguang
State Key Laboratory of Crystal Materials, Shandong University
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ZHU Li
State Key Laboratory of Crystal Materials, Shandong University
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XU Bingchao
State Key Laboratory of Crystal Materials, Shandong University
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WANG Jiyang
State Key Laboratory of Crystal Materials, Shandong University
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SHAO Zongshu
State Key Laboratory of Crystal Materials, Shandong University
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Zhu Li
State Key Laboratory Of Crystal Materials Shandong University
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Xu Guibao
State Key Laboratory Of Crystal Materials Shandong University
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Du Chenlin
State Key Laboratory Of Crystal Materials Shandong University
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Xu Bingchao
State Key Laboratory Of Crystal Materials Shandong University
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Qin Lianjie
State Key Laboratory Of Crystal Materials Shandong University
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Wang Zhengping
State Key Laboratory Of Crystal Materials Shandong University
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Meng X
State Key Laboratory Of Crystal Materials Shandong University
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- Diode-End-Pumped Continuous-Wave and Q-Switched Nd:GdVO4/KTP Laser at 671 nm