Annealing Behavior of Defects in Neutron-Transmutation-Doped Floating Zone Si

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-05-15

著者

• Meng X

  State Key Laboratory Of Crystal Materials Shandong University

• MENG Xiangti

  Institute of Nuclear Energy Technology, Tsinghua University

関連論文

• Crystal Growth, Thermal and Laser Properties of Neodymium-doped Strontium Fluorapatite
• Diode-Laser-Array End-Pumped Actively Q-Switched Nd:GdVO_4 Laser at 1.06 μm Formed with a Flat-Flat Resonator
• Laser Properties at 1.06 μm for Nd:GdVO_4 Single Crystal Pumped by a High Power Laser Diode
• Diode-End-Pumped Continuous-Wave and Q-Switched Nd:GdVO_4/KTP Laser at 671nm
• Growth, Luminescence Properties and Laser Characterization of Nd:GdVO_4 Crystal at 1.34 μm
• Annealing Behavior of Defects in Neutron-Transmutation-Doped Floating Zone Si

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