Diode-End-Pumped Continuous-Wave and Q-Switched Nd:GdVO4/KTP Laser at 671 nm
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概要
- 論文の詳細を見る
We have demonstrated a diode-end-pumped continuous-wave and Q-switched Nd:GdVO4 red laser through intracavity frequency-doubling with a type-II phase-matched KTP crystal. The maximum CW output power at 671 nm was measured to be 505 mW at the incident pump power of 12 W, with the corresponding optical conversion efficiency of 4.2%. When the repetition frequency was 15 kHz, the maximum quasi-CW red output power was obtained to be 781 mW, with the corresponding optical conversion efficiency of 6.5%, the shortest pulse width of 65 ns, the highest pulse energy of 52 μJ and the highest peak power of 801 W.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-08-15
著者
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ZHANG Huaijin
State Key Laboratory of Crystal Materials, Shandong University
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Xu Guibao
State Key Laboratory Of Crystal Materials Shandong University
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Qin Lianjie
State Key Laboratory Of Crystal Materials And Institute Of Crystal Materials
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Du Chenlin
State Key Laboratory Of Crystal Materials And Institute Of Crystal Materials
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Wang Zhengping
State Key Laboratory Of Crystal Materials And Institute Of Crystal Materials Shandong University
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Xu Bingchao
State Key Laboratory Of Crystal Materials And Institute Of Crystal Materials
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Xu Xinguang
State Key Laboratory Of Crystal Materials And Institute Of Crystal Materials Shandong University
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Zhu Li
State Key Laboratory Of Crystal Materials And Institute Of Crystal Materials
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Zhu Li
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Meng Xianlin
State Key Laboratory of Crystal Materials and Institute of Crystal Materials
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Wang Jiyang
State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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Wang Jiyang
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Xu Guibao
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Xu Bingchao
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Du Chenlin
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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SHAO Zongshu
State Key Laboratory of Crystal Materials and Institute of Crystal Materials
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Shao Zongshu
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Xu Xinguang
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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ZHANG Huaijin
State Key Laboratory of Crystal Material, Shandong University
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Zhang Huaijin
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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Meng Xianlin
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
関連論文
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- Diode-End-Pumped Continuous-Wave and Q-Switched Nd:GdVO4/KTP Laser at 671 nm
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