Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline Silicon
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概要
- 論文の詳細を見る
We have investigated the nucleation process and crystallization process in the fabrication of nanocrystalline silicon (nc-Si). The nanocrystallization process consists of deposition of hydrogenated amorphous Si(a-Si:H) and treatment of hydrogen radicals. Nuclei of nanocrystallization are formed on the a-Si:H surface only if the atmosphere is hydrogen rich. Nuclei are not formed under the normal growth conditions of a-Si:H, not to be found either on the surface or inside as-grown a-Si:H. Growth of nc-Si is caused by hydrogen radicals diffusing through the a-Si:H layer to the nuclei.
- 社団法人応用物理学会の論文
- 1992-10-01
著者
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Oda Shunri
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Otobe Masanori
Department Of Physical Electronics Tokyo Institute Of Technology
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