Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot
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概要
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Electron tunneling is investigated experimentally and theoretically for a single nanocrystalline silicon quantum dot with a diameter of less than 10 nm. Nanocrystalline silicon quantum dots are deposited by very high frequency (VHF) plasma chemical vapor deposition (CVD) sparsely over the oxide-covered silicon substrate. The dots are then naturally oxidized at room temperature by exposing it to ambient air, resulting in an ultrathin oxide tunnel barrier. A current peak is clearly observed at room temperature with the highest peak-to-valley current ratio of about 17 by contact-mode atomic force microscopy (AFM). We also perform three-dimensional numerical simulations of the transmission spectrum and tunneling current based on the scattering matrix theory. In the current–voltage ($I$–$V$) characteristics calculated at room temperature we demonstrate the resonant tunneling current peaks associated with the quasi-bound state formed in a spherical silicon quantum dot.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Oda Shunri
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Mizuta Hiroshi
Department Of Orthopaedic And Neuro-musculoskeletal Surgery Faculty Of Medical And Pharmaceutical Sc
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Surawijaya Akhmadi
Department Of Physical Electronics And Quantum Nanoelectronics Research Center Tokyo Institute Of Te
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Oda Shunri
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Surawijaya Akhmadi
Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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