Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation : Part I: Compact Device Model
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概要
- 論文の詳細を見る
This work deals with thermal-noise modeling for silicon vertical bipolar junction transistors (BJTs) and relevant integrated circuits (ICs) operating at low currents. The two-junction BJT compact model is consistently derived from the thermal-noise generalization of the Shockley semiconductor equations developed in work [11] which treats thermal noise as the noise associated with carrier velocity fluctuations. This model describes BJT with the Ito non-linear stochastic-differential-equation (SDE) system and is suitable for large-signal large-fluctuation analysis. It is shown that thermal noise in silicon p-n-junction diode contributes to "microplasma" noise. The above model opens way for a consistent-modeling-based design/optimization of bipolar device noise performance with the help of theory of Ito's SDEs.
- 社団法人電子情報通信学会の論文
- 1995-12-25
著者
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Willander Magnus
Department Of Microelectronics And Nanoscience Chalmers University Of Technology And Gothenburg Univ
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Willander Magnus
Microelectronics Center At Chalmers And Department Of Physics University Of Goteborg And Chalmers Un
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Willander Magnus
Department Of Physics Linkoping University
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Mamontov Yevgeny
Department of Physics, Linkoping University
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