Highly Sensitive and Fast Anion-Selective InN Quantum Dot Electrochemical Sensors
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概要
著者
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Willander Magnus
Department Of Microelectronics And Nanoscience Chalmers University Of Technology And Gothenburg Univ
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Rodriguez Paul
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
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Gómez Victor
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
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Nötzel Richard
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
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Kumar Praveen
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
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Alvi Naveed
Institute for Systems based on Optoelectronics and Microtechnology (ISOM), ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
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- Thermal Noise in Silicon Bipolar Transistors and Circuits for Low-Current Operation : Part I: Compact Device Model
- First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si
- Uniform Low-to-High In Composition InGaN Layers Grown on Si
- Highly Sensitive and Fast Anion-Selective InN Quantum Dot Electrochemical Sensors
- Highly Sensitive and Fast Anion-Selective InN Quantum Dot Electrochemical Sensors
- First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si