SAITOH Masumi | Toshiba Corporation

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概要

• SAITOH Masumiの詳細を見る
• 同名の論文著者
• Toshiba Corporationの論文著者

関連著者

• Hiramoto Toshiro

  Institute Of Industrial Science University Of Tokyo

• Hiramoto Toshiro

  Institute Of Industrial Science The University Of Tokyo

• Hiramoto T

  Univ. Tokyo

• SAITOH Masumi

  Toshiba Corporation

• Hiramoto Toshiro

  The Authors Are With Institute Of Industrial Science The University Of Tokyo:the Author Is With Vlsi

• Hiramoto Toshiro

  Vlsi Design And Education Center The University Of Tokyo:institute Of Industrial Science The Univers

• Hiramoto Toshiro

  Inst. Of Industrial Science And Cinqie University Of Tokyo

• Hiramoto Toshiro

  Vlsi Design And Education Center The University Of Tokyo

• HIRAMOTO Toshiro

  Institute Industrial Science, The University of Tokyo

• SAITOH Masumi

  Institute of Industrial Science, University of Tokyo

• TSUTSUI Gen

  Institute of Industrial Science, University of Tokyo

• MIYAJI Kousuke

  Institute of Industrial Science, University of Tokyo

• Tsutsui Gen

  Institute Of Industrial Science University Of Tokyo

• Saitoh Masumi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Saitoh Masumi

  Institute Of Industrial Science University Of Tokyo

• Miyaji Kousuke

  Institute Of Industrial Science University Of Tokyo

• SAITOH Masumi

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation

• TAMSIR Arifin

  Institute of Industrial Science, University of Tokyo

• JANUAR Doni

  Institute of Industrial Science, University of Tokyo

• NAGUMO Toshiharu

  Institute of Industrial Science, University of Tokyo

• Januar Doni

  Institute Of Industrial Science University Of Tokyo

• Tamsir Arifin

  Institute Of Industrial Science University Of Tokyo

• Nagumo Toshiharu

  Institute Of Industrial Science The University Of Tokyo

• Nagumo Toshiharu

  Institute Of Industrial Science University Of Tokyo

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著作論文

• Modeling of Body Factor and Subthreshold Swing in Short Channel Bulk MOSFETs
• Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement
• Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain
• Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs

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