INOUE Koji | The Oarai Center, Institute for Materials Research, Tohoku University
スポンサーリンク
概要
関連著者
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Nagai Yasuyoshi
The Oarai Center Institute For Materials Research Tohoku University
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INOUE Koji
The Oarai Center, Institute for Materials Research, Tohoku University
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Takamizawa Hisashi
The Oarai Center Institute For Materials Research Tohoku University
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Shimizu Yasuo
The Oarai Center Institute For Materials Research Tohoku University
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Inoue Koji
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Toyama Takeshi
The Oarai Center Institute For Materials Research Tohoku University
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UCHIDA Hiroshi
Toshiba Nanoanalysis Corporation
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Miyagi Takahiro
Toray Research Center Inc.
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Kitamoto Katsuyuki
Toray Research Center Inc.
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Kato Jun
Toray Research Center Inc.
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Kato Mikio
Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japan
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Yano Fumiko
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Okada Noriyuki
Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japan
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MOGAMI Tohru
NEC Corporation
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NISHIDA Akio
Renesas Electronics Corporation
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AKAHORI Seishi
Toray Research Center, Inc.
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KATO Mikio
Toshiba Nanoanalysis Corporation
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YANO Fumiko
The Oarai Center, Institute for Materials Research, Tohoku University
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OKADA Noriyuki
Toshiba Nanoanalysis Corporation
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NAGATA Shinji
Institute for Chemical Research, Kyoto University
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NAGAI Yasuyoshi
The Oarai Center, Institute for Materials Research, Tohoku University
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Shikama Tatsuo
Institute For Materials Research Tohoku University
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Suzuki Naoki
The Ihdmi Jikei University School Of Med.
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Yano Fumiko
Mirai-selete
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TSUNOMURA Takaaki
MIRAI-Selete
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Hasegawa Masayuki
Institute For Materials Research Tohoku University
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Nishida Akio
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
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Nishida Akio
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Mogami Tohru
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
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Shimizu Yasuo
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Nagai Yasuyoshi
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Hyodo Toshio
Department of Basic Science, Graduate School of Arts and Sciences, University of Tokyo, Meguro, Tokyo 153-8902, Japan
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Yano Fumiko
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
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Yano Fumiko
MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Takamizawa Hisashi
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Toyama Takeshi
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Tsunomura Takaaki
MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan
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Nishida Akio
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Mogami Tohru
NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan
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Akahori Seishi
Toray Research Center, Inc., Otsu 520-8567, Japan
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Yano Fumiko
Tokyo City University, Setagaya, Tokyo 158-8557, Japan
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Nagata Shinji
Institute for Materials Research, Tohoku University, Sendai 980-0812, Japan
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Hoshi Katsuya
Institute for Materials Research, Tohoku University, Sendai 980-0812, Japan
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Shikama Tatsuo
Institute for Materials Research, Tohoku University, Sendai 980-0812, Japan
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YANO Fumiko
Tokyo City University
著作論文
- Channel Dopant Distribution in Metal--Oxide--Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography
- Delocalized Positronium in BaF2
- Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography
- Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65 nm Node by Atom Probe Tomography
- Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65nm Node by Atom Probe Tomography