Three-Dimensional Characterization of Deuterium Implanted in Silicon Using Atom Probe Tomography

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概要

• 論文の詳細を見る

• Although characterization of hydrogen (H) in silicon (Si) is of interest from a device physics viewpoint, this is difficult using conventional analytical methods. In this study, deuterium (D) was used as a proxy for H, and the distribution of implanted D-ions in Si(100) was investigated using atom probe tomography (APT). D can be distinguished from the residual H gas in the APT chamber. The APT results indicated that D tended to form clusters, whose distribution was similar to that of {311} defects identified using transmission electron microscopy, suggesting that the D ions segregate in the vicinity of these defects.

• 2013-06-25

著者

• NAGATA Shinji

  Institute for Chemical Research, Kyoto University

• Shikama Tatsuo

  Institute For Materials Research Tohoku University

• Nagai Yasuyoshi

  The Oarai Center Institute For Materials Research Tohoku University

• Takamizawa Hisashi

  The Oarai Center Institute For Materials Research Tohoku University

• Shimizu Yasuo

  The Oarai Center Institute For Materials Research Tohoku University

• Inoue Koji

  The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

• Yano Fumiko

  Tokyo City University, Setagaya, Tokyo 158-8557, Japan

• Nagata Shinji

  Institute for Materials Research, Tohoku University, Sendai 980-0812, Japan

• Hoshi Katsuya

  Institute for Materials Research, Tohoku University, Sendai 980-0812, Japan

• Shikama Tatsuo

  Institute for Materials Research, Tohoku University, Sendai 980-0812, Japan

• INOUE Koji

  The Oarai Center, Institute for Materials Research, Tohoku University

• YANO Fumiko

  Tokyo City University

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