Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65nm Node by Atom Probe Tomography

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2013-04-25

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Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65 nm Node by Atom Probe Tomography
Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65nm Node by Atom Probe Tomography

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